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FDD6612A 参数 Datasheet PDF下载

FDD6612A图片预览
型号: FDD6612A
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道PowerTrench MOSFET的 [30V N-Channel PowerTrench MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 6 页 / 123 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDD6612A/FDU6612A
February 2004
FDD6612A/FDU6612A
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
Features
30 A, 30 V
R
DS(ON)
= 20 mΩ @ V
GS
= 10 V
R
DS(ON)
= 28 mΩ @ V
GS
= 4.5 V
Low gate charge
Fast Switching
High performance trench technology for extremely
low R
DS(ON)
Applications
DC/DC converter
Motor Drives
D
D
G
S
I-PAK
(TO-251AA)
G D S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25 C unless otherwise noted
o
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Ratings
30
±20
30
9.5
60
36
2.8
1.3
–55 to +175
Units
V
V
A
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
3.9
45
96
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD6612A
FDU6612A
Device
FDD6612A
FDU6612A
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
©2004
Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)