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FDD6690A 参数 Datasheet PDF下载

FDD6690A图片预览
型号: FDD6690A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平MOSFET PowerTrenchTM [N-Channel, Logic Level, PowerTrenchTM MOSFET]
分类和应用:
文件页数/大小: 6 页 / 118 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDD6690A
July 2003
FDD6690A
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Features
46 A, 30 V
R
DS(ON)
= 12 mΩ @ V
GS
= 10 V
R
DS(ON)
= 14 mΩ @ V
GS
= 4.5 V
Low gate charge
Fast Switching Speed
High performance trench technology for extremely
low R
DS(ON)
Applications
DC/DC converter
Motor Drives
D
D
G
S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Units
V
V
A
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
46
12
100
56
3.3
1.5
–55 to +175
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD6690A
Device
FDD6690A
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2003
Fairchild Semiconductor Corp.
FDD6690A Rev EW)