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FDD8896 参数 Datasheet PDF下载

FDD8896图片预览
型号: FDD8896
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用: 晶体晶体管开关
文件页数/大小: 11 页 / 130 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDD8896 / FDU8896
September 2004
FDD8896 / FDU8896
N-Channel PowerTrench
®
MOSFET
30V, 94A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
• r
DS(ON)
= 5.7mΩ, V
GS
= 10 V, I
D
= 35A
• r
DS(ON)
= 6.8mΩ, V
GS
= 4.5V, I
D
= 35A
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
Applications
• DC/DC converters
• High power and current handling capability
D
G
S
I-PAK
(TO-251AA)
G D S
G
D
D-PAK
TO-252
(TO-252)
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
I
D
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
Parameter
Ratings
30
±20
94
85
52
o
C/W)
17
Figure 4
168
80
0.53
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
25
o
C, V
Continuous (T
amb
=
GS
= 4.5V) (Note
o
C, V
25
GS
= 10 V, with
1)
R
θ
JA
=
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252,
1in
2
copper pad area
1.88
100
52
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDD8896
FDU8896
Device
FDD8896
FDU8896
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C