FDN304P
June 2000
PRELIMINARY
FDN304P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–2.4 A, –20 V.
R
DS(ON)
= 0.052
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.070
Ω
@ V
GS
= –2.5 V
R
DS(ON)
= 0.100
Ω
@ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Battery protection
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOT -3
TM
G
T
A
=25 C unless otherwise noted
o
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
°C
–
2.4
–
10
0.5
0.46
-55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.304
Device
FDN304P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2000
Fairchild Semiconductor Corporation
FDN304P Rev B(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
