FDN335N
April 1999
FDN335N
N-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Features
•
•
•
1.7 A, 20 V. R
DS(ON)
= 0.07
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.100
Ω
@ V
GS
= 2.5 V.
Low gate charge (3.5nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
DC/DC converter
•
Load switch
•
D
D
S
SuperSOT -3
TM
G
T
A
= 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
20
(Note 1a)
Units
V
V
A
W
°
C
±
8
1.7
8
0.5
0.46
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
335
©1999
Fairchild Semiconductor Corporation
Device
FDN335N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
FDN335N Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
