FDS4897AC Dual N & P-Channel PowerTrench
®
MOSFET
October 2008
FDS4897AC
Dual N & P-Channel PowerTrench
®
MOSFET
N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ
Features
Q1: N-Channel
Max r
DS(on)
= 26 mΩ at V
GS
= 10 V, I
D
= 6.1 A
Max r
DS(on)
= 31 mΩ at V
GS
= 4.5 V, I
D
= 5.6 A
Q2: P-Channel
Max r
DS(on)
= 39 mΩ at V
GS
= -10 V, I
D
= -5.2 A
Max r
DS(on)
= 65 mΩ at V
GS
= -4.5 V, I
D
= -4.1 A
100% UIL Tested
RoHS Compliant
General Description
These dual N- and P-Channel MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench
®
process
that has been especially tailored to minimize on-state resistance
and yet maintain superior switching performance.
Applications
Inverter
Power Supplies
D2
D2
D1
D1
G2
S2
G1
Pin 1
SO-8
S1
D1
8
1
S1
D2
D2
D1
5
6
Q1
Q2
4
3
2
G2
S2
G1
7
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
I
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
P
D
E
AS
T
J
, T
STG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
T
A
= 25 °C (Note 1a)
T
A
= 25 °C (Note 1b)
(Note 3)
37
Parameter
Q1
40
±20
6.1
24
2.0
1.6
0.9
73
mJ
°C
-55 to +150
W
Q2
-40
±20
-5.2
-24
Units
V
V
A
Thermal Characteristics
R
θJC
R
θJC
Thermal Resistance, Junction to Case,
Thermal Resistance, Junction to Ambient,
(Note 1)
(Note 1a)
40
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS4897AC
Device
FDS4897AC
Package
SO-8
Reel Size
13 ”
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
