FDS6294
November 2003
FDS6294
30V N-Channel Fast Switching PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Features
•
13 A, 30 V.
R
DS(ON)
= 11.3 mΩ @ V
GS
= 10 V
R
DS(ON)
= 14.4 mΩ @ V
GS
= 4.5 V
•
Low gate charge (10 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability.
Applications
•
DC/DC converter
•
Power management
•
Load switch
D
D
D
D
SO-8
D
D
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
°C
13
50
3.0
1.2
–55 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS6294
Device
FDS6294
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2003
Fairchild Semiconductor Corporation
FDS6294 Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
