FDS6375
February 1999
FDS6375
Single P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
-8.0 A, -20 V. R
DS(on)
= 0.024
Ω
@ V
GS
= -4.5 V
R
DS(on)
= 0.032
Ω
@ V
GS
= -2.5 V.
•
•
•
•
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
DC/DC converter
Load switch
Battery Protection
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1a)
Units
V
V
A
W
±
8
-8.0
-50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
FDS6375
Device
FDS6375
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©1999
Fairchild Semiconductor Corporation
FDS6375 Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
