FDS6670A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min Typ
30
26
Max
Units
V
mV/°C
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
I
D
= 250
µA
1
10
±100
µA
µA
nA
V
DS
= 24 V, V
GS
= 0 V, T
J
=55°C
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
1
1.8
–5.3
6
7.2
8.5
3
V
mV/°C
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 13 A
V
GS
= 4.5 V,
I
D
= 10.5 A
V
GS
= 10 V, I
D
= 13 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 15 V,
V
DS
= 5 V
I
D
= 13 A
50
8
10
14
mΩ
I
D(on)
g
FS
A
55
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
2220
535
200
1.7
pF
pF
pF
Ω
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
11
13
40
13
19
24
64
24
30
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 13 A,
21
6
7
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
Voltage
Diode Reverse Recovery Time
I
F
= 13 A,
d
iF
/d
t
= 100 A/µs
Diode Reverse Recovery Charge
2.1
0.7
31
21
1.2
A
V
nS
nC
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
50°C/W when mounted
on a 1in
2
pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2
Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6670A Rev F (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
