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FDS6672A 参数 Datasheet PDF下载

FDS6672A图片预览
型号: FDS6672A
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道PowerTrench MOSFET的 [30V N-Channel PowerTrench MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 8 页 / 207 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS6672A
February 2000
PRELIMINARY
FDS6672A
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Features
12.5 A, 30 V. R
DS(ON)
= 8 mΩ @ V
GS
= 10 V
R
DS(ON)
= 9.5 mΩ @ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (33 nC typical)
High power and current handling capability
Applications
DC/DC converter
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±12
(Note 1a)
Units
V
V
A
W
12.5
50
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6672A
Device
FDS6672A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS6672A Rev B(W)