FDS6676S
January 2004
FDS6676S
30V N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6676S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6676S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Features
•
14.5 A, 30 V.
R
DS(ON)
7.5 mΩ @ V
GS
= 10 V
R
DS(ON)
9.0 mΩ @ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (43nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
Applications
•
DC/DC converter
•
Motor drives
•
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±16
(Note 1a)
Units
V
V
A
W
14.5
50
2.5
1.2
1
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS6676S
Device
FDS6676S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2004
Fairchild Semiconductor Corporation
FDS6676S Rev F1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
