FDS6986S
September 2002
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench
SyncFET
™
General Description
The FDS6986S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6986S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
R
DS(on)
= 20 mΩ @ V
GS
= 10V
R
DS(on)
= 28 mΩ @ V
GS
= 4.5V
•
Q1:
Optimized for low switching losses
Low gate charge (6.5 nC typical)
R
DS(on)
= 29 mΩ @ V
GS
= 10V
R
DS(on)
= 38 mΩ @ V
GS
= 4.5V
7.9A, 30V
6.5A, 30V
D
1
/S
D2
1
/S
D2
D1
D
D
5
6
7
Q2
4
3
D
D1
Q1
2
1
SO-8
G
S1
Pin 1
SO-8
S
S
S
G
S2
1
2
/D
G
8
2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30
±16
6.5
20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
±20
7.9
30
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6986S
2002
Fairchild Semiconductor Corporation
Device
FDS6986S
Reel Size
13”
Tape width
12mm
Quantity
2500 units
FDS6986S Rev C1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
