FDS8333C
August 2002
FDS8333C
30V N & P-Channel PowerTrench
®
MOSFETs
General Description
These N & P-Channel MOSFETs are
produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
Features
•
Q1
4.1 A, 30V. R
DS(ON)
= 80 mΩ @ V
GS
= 10 V
R
DS(ON)
= 130 mΩ @ V
GS
= 4.5 V
–3.4 A, 30V. R
DS(ON)
= 130 mΩ @ V
GS
= –10 V
R
DS(ON)
= 200 mΩ @ V
GS
= –4.5 V
•
Q2
•
•
•
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
.
High power and handling capability in a widely used
surface mount package.
Q2
D1
D
D2
D
D1
D
D
D2
5
6
Q1
4
3
2
1
SO-8
Pin 1
SO-8
G2
S2
G
G1
S
S1
S
7
8
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
T
A
=25
o
C unless otherwise noted
Parameter
Q1
30
±16
(Note 1a)
Q2
–30
±20
–3.4
–20
2
1.6
1
0.9
–55 to +150
Units
V
A
4.1
20
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
Package Marking and Ordering Information
Device Marking
FDS8333C
Device
FDS8333C
Reel Size
7’’
Tape width
12mm
Quantity
2500 units
©2002
Fairchild Semiconductor Corporation
FDS8333C Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
