FDS9412
April 2000
FDS9412
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer DC-DC
converter where fast switching, low conduction loss and
high efficiency are needed.
Features
•
7.9 A, 30 V.
R
DS(ON)
= 22 mΩ @ V
GS
= 10 V
R
DS(ON)
= 36 mΩ @ V
GS
= 4.5 V
•
Very low gate charge.
•
High switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability in a
widely used surface mount package.
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
7.9
24
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS9412
Device
FDS9412
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS9412 Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
