Typical Electrical And Thermal Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
150
I
D
= -0.25A
4
V
DS
= 5V
10V
15V
CAPACITANCE (pF)
100
Ciss
50
3
Coss
20
2
1
10
f = 1 MHz
V
GS
= 0 V
Crss
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
, GATE CHARGE (nC)
5
0.1
0.3
-V
0.5
1
5
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
15
25
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
2
1
-I
D
, DRAIN CURRENT (A)
0.5
RD
O
S(
N)
L
IM
IT
5
1m
s
10
1s
10
s
DC
4
POWER (W)
0m
s
SINGLE PULSE
R
θ
JA
=357° C/W
T
A
= 25°C
3
0.1
0.05
0.02
0.01
0.1
2
V
GS
= -2.7V
SINGLE PULSE
R
θ
JA
= 357 °C/W
T
A
= 25°C
0.2
0.5
-V
DS
1
0
0.001
0.01
0.1
1
10
100
300
1
2
5
10
20
35
SINGLE PULSE TIME (SEC)
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 357 °C/W
t
1
T
J
- T
t
2
= P * R
JA
(t)
θ
Duty Cycle, D = t
1
/t
2
A
100
300
Figure 11. Transient Thermal Response Curve.
FDV304P Rev.E
1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
