FGA25N120AN
180
T
C
= 25℃
160
140
20V
17V
15V
12V
120
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
120
100
V
GE
= 10V
80
60
40
20
0
0
2
4
6
8
10
80
60
40
20
0
0
2
4
6
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0
Common Emitter
V
GE
= 15V
50
Vcc = 600V
load Current : peak of square wave
40
Collector-Emitter Voltage, V
CE
[V]
40A
3.5
Load Current [A]
30
3.0
I
C
= 25A
20
2.5
10
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 60W
2.0
25
50
75
100
125
0
0.1
1
10
100
1000
Case Temperature, T
C
[℃]
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector-Emitter Voltage, V
CE
[V]
16
Collector-Emitter Voltage, V
CE
[V]
16
12
12
8
8
40A
4
25A
I
C
= 12.5A
0
0
4
8
12
16
20
4
40A
25A
I
C
= 12.5A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2004 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
FGA25N120AN Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
