FQP50N06L
Typical Characteristics
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
10
2
10
1
10
1
175
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= 25V
2. 250μ s Pulse Test
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
10
-1
10
0
10
10
0
0
10
1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
60
2
50
10
Drain-Source On-Resistance
R
DS(ON)
[m
Ω
],
40
V
GS
= 5V
30
I
DR
, Reverse Drain Current [A]
V
GS
= 10V
10
1
20
10
※
Note : T
J
= 25℃
175℃
0
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0
25
50
75
100
125
150
175
200
10
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
4000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
10
V
GS
, Gate-Source Voltage [V]
3000
V
DS
= 30V
8
V
DS
= 48V
Capacitance [pF]
C
oss
C
iss
2000
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
4
1000
C
rss
2
※
Note : I
D
= 52.4A
0
0
-1
10
0
10
20
30
40
50
10
0
10
1
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
