FQP8N60C/FQPF8N60C
Typical Characteristics
(Continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 4 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
2
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
10
2
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
10
1
10
µ
s
I
D
, Drain Current [A]
1 ms
10 ms
100 ms
10
1
100
µ
s
10 ms
100 ms
1 ms
10
0
DC
10
0
DC
10
-1
※
Notes :
o
1. T
C
= 25 C
10
-1
2. T
J
= 150 C
3. Single Pulse
o
10
-2
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0
1
2
3
10
0
10
1
10
2
10
3
10
-2
V
DS
, Drain-Source Voltage [V]
10
10
10
10
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP8N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF8N60C
8
6
I
D
, Drain Current [A]
4
2
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
