FQP12N60C/FQPF12N60C
QFET
FQP12N60C/FQPF12N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
TM
Features
•
•
•
•
•
•
12A, 600V, R
DS(on)
= 0.65Ω @V
GS
= 10 V
Low gate charge ( typical 48 nC)
Low Crss ( typical 21 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
▲
●
●
G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP12N60C
12
7.4
48
FQPF12N60C
600
12 *
7.4 *
48 *
±
30
870
12
22.5
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
225
1.78
-55 to +150
300
51
0.41
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θJS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP12N60C
0.56
0.5
62.5
FQPF12N60C
2.43
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
