IRF640, RF1S640, RF1S640SM
Data Sheet
January 2002
18A, 200V, 0.180 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17422.
Features
• 18A, 200V
• r
DS(ON)
= 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRF640
RF1S640
RF1S640SM
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
IRF640
RF1S640
RF1S640
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
