MB1S - MB8S
MB1S - MB8S
4
3
1 :
2 :
~
~
+
0.106(2.7)
0.09(2.3)
0.118(3.0)
MAX
Features
•
•
•
Low leakage
Surge overload rating:
35 amperes peak.
Ideal for printed circuit board.
1
––
+
3 :
0.008(0.2)
4 : ––
~
~
2
0.275(7)MAX
0.067(1.7)
0.057(1.3)
0.051(1.3)
0.035(0.9)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.057(1.3)
C0.02(0.5)
SOIC-4
Polarity symbols molded
or marking on body
0.031(0.8)
0.0191(0.5)
0.106(2.7)
0.09(2.3)
0.193(4.9)
0.177(4.5)
0.014(0.35)
0.006(0.15)
0.043(1.1)
0.027(0.7)
Dimensions are in:
inches (mm)
0.5 Ampere Glass Passivated Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
qJA
R
qJL
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
@ T
A
= 50°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Tem perature Range
Operating Junction Tem perature
Value
0.5
Units
A
35
1.4
11
85
20
-55 to +150
-55 to +150
A
W
mW/°C
°C/W
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
1S
2S
200
140
200
4S
400
280
400
5.0
0.5
1.0
5.0
13
6S
600
420
600
8S
800
560
800
100
70
100
Units
V
V
V
mA
mA
V
2
At
pF
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Maximum Reverse Leakage,
per leg @ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage Drop,
per bridge
@ 0.5 A
2
I t rating for fusing
t < 8.3 ms
Typi cal Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
ã1999
Fairchild Semiconductor Corporation
MB1S-MB8S, Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
