MBR1535CT- MBR1560CT
MBR1535CT - MBR1560CT
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guarding for over voltage protection.
PIN 1
+
PIN 3
CASE
PIN 2
1
2
3
TO-220AB
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
1535
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 105°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
35
Value
1545
45
15
150
-65 to +175
-65 to +150
1550
50
1560
60
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Parameter
Value
41.7
60
3.0
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
T
A
= 25°C unless otherwise noted
Parameter
1535
Forward Voltage I
F =
7.5 A, T
C
= 25°C
I
F =
7.5 A, T
C
= 125°C
I
F =
15 A, T
C
= 25°C
I
F =
15 A, T
C
= 125°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
-
0.57
0.84
0.72
0.1
15
1.0
Device
1545
1550
1560
0.75
0.65
-
-
1.0
50
0.5
Units
V
V
V
V
mA
mA
A
I
R
I
RRM
2001
Fairchild Semiconductor Corporation
MBR1535CT - MBR1560CT, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
