MBR2535CT - MBR2560CT
Discrete POWER & Signal
Technologies
MBR2535CT - MBR2560CT
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
0.113(2.87)
0.103(2.62)
0.27(6.86)
0.23(5.84)
0.412(10.5)
MAX
0.154(3.91)
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.055(1.40)
0.045(1.14)
0.594(15.1)
0.587(14.9)
TO-220AB
1
0.16(4.06)
0.14(3.56)
2
3
0.11(2.79)
0.10(2.54)
PIN 1
+
PIN 3
CASE
PIN 2
0.037(0.94)
0.027(0.68)
0.56(14.22)
0.53(13.46)
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(repetitive)
i
f(surge)
P
D
R
θJA
R
θJL
T
stg
T
J
T
A
= 25°C unless otherwise noted
0.025(0.64)
0.105(2.67)
0.095(2.41)
0.014(0.35)
Dimensions are in: inches (mm)
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 130°C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 130°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
Value
30
Units
A
30
150
2.0
16.6
60
1.5
-65 to +175
-65 to +150
A
A
W
mW/°C
°C/W
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
2535CT
2545CT
45
31
45
10,000
0.2
40
-
-
0.82
0.73
1.0
1.0
50
0.75
0.65
-
-
0.5
2550CT
50
35
50
2560CT
60
42
60
35
24
35
Units
V
V
V
V/uS
mA
mA
V
V
V
V
A
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage
(Rated V
R
)
Voltage Rate of Change (Rated V
R
)
Maximum Reverse Current
T
A
= 25°C
@ rated V
R
T
A
= 125°C
Maximum Forward Voltage
I
F =
15 A, T
C
= 25°C
I
F =
15 A, T
C
= 125°C
I
F =
30 A, T
C
= 25°C
I
F =
30 A, T
C
= 125°C
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
©1999
Fairchild Semiconductor Corporation
MBR2535CT - MBR2560CT, Rev. A