MBR735 - MBR760
MBR735 - MBR760
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
.113(2.87)
.103(2.62)
.594(15.1)
.587(14.91)
.27(6.86)
.23(5.84)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
1
.16(4.06)
.14(3.56)
2
Dimensions
are in:
inches (mm)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
TO-220AC
.037(0.94)
.027(0.68)
7.5 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(repetitive)
i
f(surge)
Average Rectified Current
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 105°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
.205(5.20)
.195(4.95)
PIN 1 +
+
PIN 2 -
CASE Positive
CASE
.025(0.64)
.014(0.35)
T
A
= 25°C unless otherwise noted
Dimensions are in: inches (mm)
Parameter
Value
7.5
15
150
2.0
16.6
60
3.0
-65 to +175
-65 to +150
Units
A
A
A
W
mW/°C
°C/W
°C/W
°C
°C
P
D
R
θJA
R
θJL
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
735
745
45
31
45
10,000
0.1
15
-
0.57
0.84
0.72
1.0
0.5
50
0.75
0.65
-
-
0.5
750
50
35
50
760
60
42
60
35
24
35
Units
V
V
V
V/uS
mA
mA
V
V
V
V
A
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage
(Rated V
R
)
Voltage Rate of Change (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage
I
F =
7.5 A, T
C
= 25°C
I
F =
7.5 A, T
C
= 125°C
I
F =
15 A, T
C
= 25°C
I
F =
15 A, T
C
= 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
©1999
Fairchild Semiconductor Corporation
MBR735 - MBR760, Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
