MJE3055T
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to I
C
=10A
• High Current Gain-Bandwidth Product : f
T
= 2MHz (Min.)
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
70
60
5
10
6
75
0.6
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
CEO
I
CEX1
I
CEX2
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Test Condition
I
C
= 200mA, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 70V, V
BE
(off) = -1.5V
V
CE
= 70V, V
BE
(off) = -1.5V
@ T
C
= 150°C
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 10A
I
C
= 4A, I
B
= 0.4A
I
C
= 10A, I
B
= 3.3A
V
CE
= 4V, I
C
= 4A
V
CE
= 10V, I
C
= 500mA
2
20
5
Min.
60
Max.
700
1
5
5
100
1.1
8
1.8
V
V
V
MHz
Units
V
µA
mA
mA
mA
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001