FFB2222A / FMB2222A / MMPQ2222A
Discrete POWER & Signal
Technologies
FFB2222A
E2
B2
C1
FMB2222A
C2
E1
C1
MMPQ2222A
E2
B2
E3
B3
E4
B4
E1
C2
B1
pin #1
B1
B2
E2
pin #1
B1
E1
SC70-6
Mark: .1P
SuperSOT
™
-6
Mark: .1P
SOIC-16
C1
C2
C1
C3
C2
C4
C4
C3
NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
40
75
6.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB2222A
300
2.4
415
Max
FMB2222A
700
5.6
180
MMPQ2222A
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
©
1998 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
