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MMPQ2907A 参数 Datasheet PDF下载

MMPQ2907A图片预览
型号: MMPQ2907A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP多芯片通用放大器 [PNP Multi-Chip General Purpose Amplifier]
分类和应用: 晶体放大器晶体管开关光电二极管
文件页数/大小: 7 页 / 90 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FFB2907A / FMB2907A / MMPQ2907A
FFB2907A
E2
B2
C1
FMB2907A
C2
E1
C1
MMPQ2907A
E2
B2
E3
B3
E4
B4
E1
B1
SC70-6
Mark: .2F
pin #1
C2
B1
E1
pin #1
B1
B2
E2
SOIC-16
Mark:
MMPQ2907A
pin #1
C1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT
-6
Mark: .2F
Dot denotes pin #1
C2
C1
C3
C2
C4
C4
C3
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
60
60
5.0
600
-55 to +150
Units
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB2907A
300
2.4
415
Max
FMB2907A
700
5.6
180
MMPQ2907A
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
1998 Fairchild Semiconductor Corporation