FFB3904 / FMB3904 / MMPQ3904
FFB3904
E2
B2
C1
FMB3904
C2
E1
C1
E1
MMPQ3904
E2
B2
E3
B3
E4
B4
B1
SC70-6
Mark: .1A
pin #1
C2
B1
E1
pin #1
B1
B2
E2
C2
C1
C3
C2
C4
C4
C3
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT
-6
Mark: .1A
Dot denotes pin #1
SOIC-16
Mark: MMPQ3904
pin #1
C1
NPN Multi-Chip General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
40
60
6.0
200
-55 to +150
Units
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB3904
300
2.4
415
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
1998 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
