Typical Electrical Characteristics
-2.5
I
D
, DRAIN-SOURCE CURRENT (A)
1.8
-2.0
R
DS(ON)
, NORMALIZED
-2
-3.5
-3.0
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -4.5V
-2.5
-2.7
1.6
1.4
V
GS
=-2.0V
1.2
-1.5
-2.5
1
0.8
0.6
0.4
-2.7
-3.0
-3.5
-4.5
-1
-1.5
-0.5
0
0
-0.5
V
DS
-1
-1.5
-2
-2.5
, DRAIN-SOURCE VOLTAGE (V)
-3
0
-0.5
-1
-1.5
-2
I , DRAIN CURRENT (A)
D
-2.5
-3
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
1.8
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
1.8
R
DS(ON)
, NORMALIZED
I
D
= -1A
V
GS
= -2.7
R
DS(on)
, NORMALIZED
V
GS
= -2.7 V
1.6
1.4
1.2
1
0.8
0.6
0.4
TJ = 125°C
25°C
-55°C
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
-0.5
-1
-1.5
-2
I , DRAIN CURRENT (A)
D
-2.5
-3
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
V
DS
= - 3V
-1.2
25°C
T = -55°C
J
125°C
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE (V)
-1.5
1.15
1.1
V
DS
= V
GS
I
D
= -250µA
I
D
, DRAIN CURRENT (A)
1.05
1
0.95
0.9
0.85
0.8
-50
-0.9
-0.6
-0.3
0
-0.5
-0.75
V
GS
-1
-1.25
-1.5
-1.75
-2
-25
, GATE TO SOURCE VOLTAGE (V)
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation
with Temperature.
NDS332P Rev.E
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
