欢迎访问ic37.com |
会员登录 免费注册
发布采购

NM27C256QE100 参数 Datasheet PDF下载

NM27C256QE100图片预览
型号: NM27C256QE100
PDF下载: 下载PDF文件 查看货源
内容描述: 262,144位( 32K ×8 )高性能CMOS EPROM [262,144-Bit (32K x 8) High Performance CMOS EPROM]
分类和应用: 可编程只读存储器电动程控只读存储器
文件页数/大小: 11 页 / 114 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号NM27C256QE100的Datasheet PDF文件第2页浏览型号NM27C256QE100的Datasheet PDF文件第3页浏览型号NM27C256QE100的Datasheet PDF文件第4页浏览型号NM27C256QE100的Datasheet PDF文件第5页浏览型号NM27C256QE100的Datasheet PDF文件第7页浏览型号NM27C256QE100的Datasheet PDF文件第8页浏览型号NM27C256QE100的Datasheet PDF文件第9页浏览型号NM27C256QE100的Datasheet PDF文件第10页  
NM27C256 262,144-Bit (32K x 8) High Performance CMOS EPROM
Turbo Programming Algorithm Flow Chart
V
CC
= 6.5V V
PP
= 12.75V
n=0
ADDRESS = FIRST LOCATION
PROGRAM ONE 50µs PULSE
INCREMENT n
NO
DEVICE
FAILED
YES
n = 10?
FAIL
VERIFY
BYTE
PASS
LAST
ADDRESS
?
YES
NO
INCREMENT
ADDRESS
n=0
ADDRESS = FIRST LOCATION
VERIFY
BYTE
INCREMENT
ADDRESS
NO
PASS
FAIL
PROGRAM ONE
50
µs
PULSE
LAST
ADDRESS
?
YES
CHECK ALL BYTES
1ST: V
CC
= V
PP
= 6.0V
2ND: V
CC
= V
PP
= 4.3V
Note:
The standard National Semiconductor algorithm may also be used but it will have longer programming time.
DS010833-6
FIGURE 1.
6
www.fairchildsemi.com