TIP145/146/147
Typical Characteristics
-10
-9
100000
V
CE
= -4V
I
B
= -1800
µ
A
I
B
= -1600
µ
A
I
B
= -1400
µ
A
I
B
= -1200
µ
A
I
B
= -1000
µ
A
I
C
[A], COLLECTOR CURRENT
-8
-7
-6
-5
I
B
= -2000
µ
A
h
FE
, DC CURRENT GAIN
10000
I
B
= -800
µ
A
-4
-3
-2
-1
-0
-0
-1
-2
-3
-4
-5
1000
I
B
= -600
µ
A
I
B
= -400
µ
A
100
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-1000
I
C
=-500I
B
f=0.1MHz
-1
V
CE
(sat)
C
ob
[pF], CAPACITANCE
-10
-100
V
BE
(sat)
-100
-0.1
-0.01
-0.1
-10
-1
-1
-10
-100
-1000
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
-100
150
125
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-10
100
C
D
75
-1
50
TIP140
TIP141
TIP142
25
-0.1
-1
-10
-100
-1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
