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1MBI400U-120 参数 Datasheet PDF下载

1MBI400U-120图片预览
型号: 1MBI400U-120
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT Module]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 4 页 / 114 K
品牌: FCI-CONNECTOR [ FCI CONNECTOR ]
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IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
1200V / 400A 1 in one-package
Equivalent Circuit Schematic
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
Terminals *
2
P
C
T
j
T
stg
V
iso
Conditions
Rating
1200
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
±20
600
400
1200
800
400
800
2155
+150
-40 to +125
2500
3.5
4.5
1.7
W
°C
VAC
N·m
Unit
V
V
A
Continuous
1ms
1ms
1 device
AC:1min.
Terminals *
2
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M6), Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7 N·m(M4)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
Input capacitance
Turn-on time
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
R lead
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=400mA
V
GE
=15V, I
C
=400A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=400A
V
GE
=±15V
R
G
=1.5
V
GE
=0V
I
F
=400A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
I
F
=400A
Characteristics
Min.
Typ.
4.5
6.5
1.95
2.20
1.75
2.00
45
0.36
0.21
0.03
0.37
0.07
1.80
1.90
1.60
1.70
0.40
Unit
Max.
4.0
800
8.5
2.30
2.10
1.20
0.60
1.00
0.30
2.10
1.90
0.35
nF
µs
mA
nA
V
V
Turn-off time
Forward on voltage
V
Reverse recovery time
Lead resistance, terminal-chip*
3
µs
mΩ
*
3
:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
4
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
0.0125
Unit
Max.
0.058
0.100
°C/W
°C/W
°C/W
*
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound.