IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
1200V / 400A 1 in one-package
Equivalent Circuit Schematic
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
Terminals *
2
P
C
T
j
T
stg
V
iso
Conditions
Rating
1200
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
±20
600
400
1200
800
400
800
2155
+150
-40 to +125
2500
3.5
4.5
1.7
W
°C
VAC
N·m
Unit
V
V
A
Continuous
1ms
1ms
1 device
AC:1min.
Terminals *
2
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M6), Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7 N·m(M4)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
Input capacitance
Turn-on time
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
R lead
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=400mA
V
GE
=15V, I
C
=400A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=400A
V
GE
=±15V
R
G
=1.5
Ω
V
GE
=0V
I
F
=400A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
I
F
=400A
Characteristics
Min.
Typ.
–
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6.5
1.95
2.20
1.75
2.00
45
0.36
0.21
0.03
0.37
0.07
1.80
1.90
1.60
1.70
–
0.40
Unit
Max.
4.0
800
8.5
2.30
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.10
–
1.90
–
0.35
–
nF
µs
mA
nA
V
V
Turn-off time
Forward on voltage
V
Reverse recovery time
Lead resistance, terminal-chip*
3
µs
mΩ
*
3
:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
4
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
–
–
–
–
–
0.0125
Unit
Max.
0.058
0.100
–
°C/W
°C/W
°C/W
*
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound.