FPM2750QFN
L
OW
N
OISE
H
IGH
L
INEARITY
B
ALANCED
A
MPLIFIER
M
ODULE
F
EATURES
:
•
•
•
•
•
•
•
Balanced low noise amplifier module
Excellent Noise figure: 0.4dB at 1850MHz
Low drive current: 40mA typical (3.0V)
Combined IP3: 36dBm (100mA)
Combined P1dB: 23dBm (100mA)
Small footprint: 4mm x 4mm x 0.9mm QFN
RoHS compliant: (Directive 2002/95/EC)
Datasheet v2.5
P
ACKAGE
:
G
ENERAL
D
ESCRIPTION
:
The FPM2750QFN is a packaged pair of
pseudomorphic
High
Electron
Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25µm process ensures class-leading noise
performance.
The use of a small footprint
plastic package allows for a cost effective total
system implementation.
T
YPICAL
A
PPLICATIONS
:
•
•
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
E
LECTRICAL
S
PECIFICATIONS
(as measured on each device unless otherwise stated):
P
ARAMETER
Noise Figure
S
YMBOL
NF
C
ONDITIONS
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
M
IN
T
YP
0.4
0.6
32
M
AX
U
NITS
dB
Output IP3
in balanced mode
SSG in balanced mode
IP3
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
33
dBm
36
18.5
dB
SSG
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
17.5
20
21
dBm
P1dB in balanced mode
P1dB
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
21.5
23.5
19.0
19.5
17.5
17.5
dBm
dB
Small Signal Gain
SSG
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
Power at 1dB Gain Compression
P1dB
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
ΘJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
≅
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
1W dissipation, case temperature 22°C
185
230
375
200
5
280
mA
mA
mS
μA
0.7
1.0
16
16
124
1.3
V
V
V
°C/W
Note: T
AMBIENT
= 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
