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EB1500SOT89E-BE 参数 Datasheet PDF下载

EB1500SOT89E-BE图片预览
型号: EB1500SOT89E-BE
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声高线性度PACKAGED PHEMT [LOW NOISE HIGH LINEARITY PACKAGED PHEMT]
分类和应用:
文件页数/大小: 12 页 / 783 K
品牌: FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
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FPD1500SOT89
Datasheet v3.0
T
YPICAL
T
UNED
RF P
ERFORMANCE
:
Power Transfer Characteristic
3.50
29.00
Pout
Comp Point
Drain Efficiency and PAE
70.00%
3.00
70.00%
27.00
2.50
25.00
Gain Compression (dB)
60.00%
PAE
Eff.
60.00%
50.00%
PAE (%)
50.00%
Drain Efficiency (%)
Output Power (dBm)
2.00
23.00
21.00
19.00
17.00
15.00
13.00
-2.00
1.50
40.00%
40.00%
1.00
30.00%
30.00%
.50
20.00%
20.00%
.00
10.00%
10.00%
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
-.50
16.00
.00%
-2.00
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
.00%
16.00
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at V
DS
= 5V, I
DS
= 50% of I
DSS
, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
Typical Intermodulation Performance
VDS = 5V IDS = 50% IDSS at f = 1.85GHz
-10.00
25.00
-15.00
-20.00
23.00
-25.00
21.00
-30.00
-35.00
19.00
-40.00
-45.00
17.00
-50.00
15.00
-1.00
1.00
3.00
5.00
Input Power (dBm)
-55.00
7.00
9.00
Pout
11.00
Im3, dBc
Note:
pHEMT
devices have
enhanced
intermodulation performance. This yields OIP3
values of about P
1dB
+ 14dBm. This IMD
enhancement is affected by the quiescent bias and
the matching applied to the device
.
TYPICAL I-V CHARACTERISTICS
DC IV Curves FPD1500SOT89
0.60
0.50
0.40
0.30
0.20
VG=-1.5V
VG-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.5V
VG=-0.25V
VG=0V
0.10
Note: The recommended method for measuring I
DSS
, or
any particular I
DS
, is to set the Drain-Source voltage (V
DS
)
at 1.3V. This measurement point avoids the onset of
spurious self-oscillation which would normally distort the
current measurement (this effect has been filtered from
the I-V curves presented above). Setting the V
DS
> 1.3V
will generally cause errors in the current measurements,
even in stabilized circuits.
Drain-Source Current (A)
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
3rd Oder IM Poroducts (dBc)
Output Power (dBm)
Website:
www.filtronic.com