FMA219
X-B
AND
LNA MMIC
F
EATURES
:
•
•
•
•
•
•
7.0 – 11.0 GHz Operating Bandwidth
1.1 dB Noise Figure
21 dB Small-Signal Gain
12 dBm Output Power
+3V Single Bias Supply
DC De-coupled Input and Output Ports
Datasheet v3.0
L
AYOUT
:
G
ENERAL
D
ESCRIPTION
:
The FMA219 is a 2-stage, reactively matched
pHEMT low-noise MMIC amplifier designed for
use over 7.0 to 11.0 GHz. The amplifier
requires a single +3V supply and one off-chip
component for supply de-coupling. Both the
input and output ports are DC de-coupled.
Grounding of the amplifier is provided by
plated thru-vias to the bottom of the die, no
additional ground is required. The amplifier is
unconditionally stable over all load states (-45
to +85°C), and conditionally stable if the input
port is open-circuited.
T
YPICAL
A
PPLICATIONS
:
•
•
Low noise front end amp
lifiers
General X-Band gain block
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Operating Frequency Bandwidth
Small Signal Gain
Operating Current
Small Signal Gain Flatness
Noise Figure
S
YMBOL
BW
S21
IOP
∆S21
NF
C
ONDITIONS
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
No RF input
VDD = +3 V IDD = IOP
VDD = +3 V, IDD = IOP
VDD = +3 V, IDD = IOP
POUT = +1.5 dBm SCL
VDD = +3 V
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
M
IN
7
19
50
T
YP
M
AX
11
U
NITS
GHz
dB
mA
21
65
±0.5
1.1
23
80
±0.8
1.4
dB
3rd Order Intermodulation Distortion
Power at 1dB Compression
Input Return Loss
Input Return Loss @ 9.5GHz + 10GHz
Output Return Loss
Reverse Isolation
IMD
P1dB
S11
S11(9.5+10GHz)
S22
S12
-47
11.5
12.5
-7
-3
-4
-16
-40
-10
-30
dBc
dBm
dB
dB
dB
dB
Note: T
AMBIENT
= 22°C
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
