FMA3007
2-20GH
Z
B
ROADBAND
MMIC A
MPLIFIER
F
EATURES
:
•
•
•
•
•
•
17 dBm Output Power
11 dB Gain
pHEMT Technology
Input Return Loss < -13dB
Output Return Loss < -11dB
Voltage Gain Control
Production Datasheet v3.0
F
UNCTIONAL
S
CHEMATIC
:
VG2
VDD
RF Input
RF Output
VG1
G
ENERAL
D
ESCRIPTION
:
The FMA3007 is a high performance 2-20GHz
Gallium Arsenide monolithic travelling wave
amplifier. It is suitable for use in broadband
communication, instrumentation and electronic
warfare applications. The die is fabricated
using the Filtronic 0.25µm process.
T
YPICAL
A
PPLICATIONS
:
•
•
•
Test Instrumentation
Electronic Warfare
Broadband Communication Infrastructure
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Small Signal Gain
Small Signal Gain
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power at 1dB
compression point
C
ONDITIONS
1, 2, 3
2-12GHz
12-20GHz
2-20GHz
2-20GHz
2-20GHz
2GHz
10GHz
20GHz
M
IN
9.5
9.5
-
-
-
16
18
14
-
-
60
-
T
YP
10.5
11.5
-
-
-
19
19
16
-
4.5
100
3.5
M
AX
11.5
12.5
-13
-11
-27
-
-
-
8.5
5.5
150
-
U
NITS
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
mA
V
Noise Figure
Noise Figure
Drain Current
Drain Voltage
2-4.5 GHz
4.5-20 GHz
For Vdd = 3.5V , Vg1 = -0.38V , Vg2=+1V
Notes:
1. T
Ambient
= +25°C
2. Device is biased at constant gate voltage, measured on wafer with Z0 = 50Ω
3. Measurement Conditions VG1= -0.38V, VDD= 3.5V, VG2=+1V.
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
