FMA3009
2-20GH
Z
B
ROADBAND
MMIC A
MPLIFIER
F
EATURES
:
•
•
•
•
•
•
•
10dB Gain
Single Supply (Self Biased)
26dBm P
1dB
Output Power at 8.0V
pHEMT Technology
Bias Control
Input Return Loss <-9dB
Output Return Loss <-8dB
Pre-Production Datasheet v2.5
F
UNCTIONAL
S
CHEMATIC
:
VDD
RF Input
RF Output
G
ENERAL
D
ESCRIPTION
:
The FMA3009 is a high performance 2-20GHz
Gallium Arsenide monolithic travelling wave
amplifier. It is suitable for use in broadband
communication, instrumentation and electronic
warfare applications. The die is fabricated
using the Filtronic 0.25µm process. The Circuit
is DC blocked at both the RF input and the RF
output. Bias control is achieved using a
combination of three on chip bias resistors
connected to ground, using the bond wires.
T
YPICAL
A
PPLICATIONS
:
•
•
•
Test Instrumentation
Electronic Warfare
Broadband Communication Infrastructure
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Small Signal Gain
Gain Ripple
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power at 1dB
compression point
C
ONDITIONS
2-20GHz
2-20GHz
2-20GHz
2-20GHz
2-20GHz
2 GHz
10GHz
20GHz
M
IN
8.0
T
YP
10
±1
-10
-9
-30
M
AX
12
U
NITS
dB
dB
-8
-8
-25
dB
dB
dB
dBm
24
20
19
26.3
26
21.5
250
Drain Current
Noise Figure
8.0V
4
mA
6.5
dB
5
Note: T
AMBIENT
= +25°C, Z
0
= 50Ω
Performances for on-wafer measurements
All Bias resistors bonded to ground.
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
