FMA3018QFN
M
EDIUM
L
INEARITY
I
NTEGRATED
B
ALANCED
A
MPLIFIER
M
ODULE
F
EATURES
(1.7-2.0GH
Z
):
•
•
•
•
•
•
•
•
•
•
Preliminary Datasheet v2.1
B
OARD
P
HOTOGRAPH
:
•
Balanced low noise amplifier module
No external couplers required
Excellent 40 dBm Output IP3
25 dBm Output Power (P1dB)
Excellent Return Loss (RL): -25dB
14.5 dB Small-Signal Gain (SSG)
1.2 dB Noise Figure
5 V supply (240mA current)
Cost effective footprint: 4mm x 4mm QFN
6 mm x 6mm evaluation board available
RoHS compliant: (Directive 2002/95/EC)
G
ENERAL
D
ESCRIPTION
:
The BA1500QFN MMIC module is a self-
biased, integrated and packaged balanced
amplifier mounted onto 6x6mm
2
FR4 board.
The active device is a pair of pseudomorphic
High Electron Mobility Transistors (pHEMT)
specifically
optimised
for
balanced
configuration systems. The Filtronic 0.25µm
process
ensures
class-leading
noise
performance.
The use of a small footprint
plastic package allows for a cost effective total
system implementation.
T
YPICAL
A
PPLICATIONS
:
•
•
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Frequency
Minimum Noise Figure
Input Third-Order Intercept Point
S
YMBOL
Freq
NF
IIP3
C
ONDITIONS
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
M
IN
1.7
1.2
24
T
YP
1.85
1.3
25.5
M
AX
2
1.6
26.5
U
NITS
GHz
dB
dBm
Small-Signal Gain
Small-Signal Input Return Loss
Small-Signal Output Return Loss
Power at 1dB Gain Compression
SSG
S11
S22
P1dB
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
14
-25
-25
24.5
14.5
-23
-23
25
15.5
-20
-22
25.5
dB
dB
dB
dBm
Note: T
AMBIENT
= 22°C
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
