Preliminary Data Sheet
2.1
FMS2013
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Features:
♦
♦
♦
♦
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Available as RF Known Good Die
Excellent low control voltage performance
Excellent harmonic performance
Very high isolation >49dB typ. up to 4GHz
Very low Tx Insertion loss <1.0 dB at 4GHz
Functional Schematic
RF01
V2
V1
RFIN
RF02
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5µm switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications:
Parameter
Tx Insertion Loss
Rx Insertion Loss
Return Loss
VSWR On State
VSWR Off State
Isolation at 4 GHz
2nd Harmonic Level
(T
OP
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50Ω)
Test Conditions
4GHz
4GHz
4GHz
4GHz
4GHz
4GHz
3GHz, Pin = 21dBm, Vctrl = 3V
3GHz, Pin = 27dBm, Vctrl = 5V
Min
Typ
1.0
1.0
15
1:1.3
1:1.4
49
-72
-68
30
Max
Units
dB
dB
dB
dB
dBc
dBc
ns
Switching speed
Pin = 21dBm, 10% to 90% RF
Note:
External DC blocking capacitors are required on all RF ports (typ: 47pF).
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filss.com
Website: www.filcs.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
