Preliminary Data Sheet
2.1
FMS2014QFN
High Power GaAs SPDT Switch
Features:
♦
♦
♦
♦
♦
♦
3x3x0.9mm Packaged pHEMT Switch
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
Very high Tx-Rx isolation: >28dB typ. at
1.8GHz
Very low Insertion loss: 0.5dB at 1.8GHz
Very low control current
Functional Schematic
ANT
V1
V2
RF1
RF2
Description and Applications:
The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for
switch applications. The FMS2014QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications:
Parameter
Insertion Loss
(T
AMBIENT
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50Ω)
Test Conditions
0.5 – 1.0 GHz
1.0 – 2.0 GHz
Min
Typ
0.45
0.5
20
-32
-30
-75
-75
-75
-75
<0.3
Max
Units
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
µs
Return Loss
Isolation
0.5 – 2.5 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
Switching speed : Trise, Tfall
Ton, Toff
Control Current
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
+35dBm RF input @1GHz
1.0
<10
µs
µA
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filcsi.com
Website: www.filtronic.com