Preliminary Data Sheet
2.1
FMS2017QFN
2.4GHz DPDT GaAs Single-Band WLAN Switch
Features:
3x3x0.9mm Packaged pHEMT Switch
Suitable for Single-band WLAN 802.11b/g
Applications
♦
Excellent low control voltage performance
♦
Very low Insertion loss typ. 0.6dB at 2.5GHz
♦
High isolation typ. 23dB at 2.5GHz
♦
Filtronic Advanced GaAs pHEMT Technology
♦
♦
Functional Schematic
V4
TX / RF1
V3
ANT1
RF3
ANT2
RF4
V1
RX / RF2
V2
Description and Applications:
The FMS2017QFN is a low loss, single band Gallium Arsenide antenna diversity switch designed for
use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process
technology that offers leading edge performance, optimised for switch applications.
The FMS2017QFN is designed for use in 802.11b/g WLAN modules.
Electrical Specifications:
Parameter
Insertion Loss (All Paths)
Isolation (All Paths)
Return Loss
P0.1dB
2nd Harmonic Level
3rd Harmonic Level
Switching speed
(T
AMBIENT
= 25°C,V
ctrl
= 0V/(2.4V,+3.3V), Z
IN
= Z
OUT
= 50Ω)
Conditions
2.5GHz, Small Signal
2.5GHz, Small Signal
2.5GHz, Small Signal
2.5GHz Control Voltage 3.0V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
Vctrl=2.4V, Pin=20dBm
Min
Typ
0.6
23
20
>33
-65
-65
20
Max
Units
dB
dB
dB
dBm
dBc
dBc
nS
Note:
External DC blocking capacitors are required on all RF ports (typ: 47pF)
All unused ports terminated in 50Ω.
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filcsi.com
Website: www.filtronic.co.uk/semis
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
