PRELIMINARY DATA SHEET
FP100
H
IGH
P
ERFORMANCE
PHEMT
•
FEATURES
♦
14 dBm P-1dB at 12 GHz
♦
9 dB Power Gain at 12 GHz
♦
3.0 dB Noise Figure at 12 GHz
•
DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5 x 16.5 mils (420 x 420
µm)
DIE THICKNESS: 3.9 mils (100
µm
typ.)
BONDING PADS: 3.3 x 3.5 mils (85 x 90
µm
typ.)
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.
Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz
range. The device is well-suited for telecommunication applications.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 22 ± 3 °C
Parameter
Output Power @
1 d B Compression
Power Gain @
1 d B Compression
Maximum Available Gain
Noise Figure
Power-Added Efficiency
Saturated Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Symbol
P
1dB
G
1dB
MAG
NF
η
I
DSS
G
M
V
P
|V
BDGD
|
|V
BDGS
|
|I
GSL
|
Test Conditions
f = 12 GHz; V
DS
= 5V; I
DS
= 50% I
DSS
f = 12 GHz; V
DS
= 5V; I
DS
= 50% I
DSS
f = 12 GHz; V
DS
= 5V; I
DS
= 50% I
DSS
f = 12 GHz; V
DS
= 5V; I
DS
= 50% I
DSS
f = 12 GHz; V
DS
= 5V; I
DS
= 50% I
DSS
;
P
OUT
= 15.5 dBm
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 1 mA
I
GS
= 1 mA
I
GS
= 1 mA
V
GS
= -5 V
20
15
15
-0.50
8
7
10.5
10
4
10
20
-2.5
Min
13
8
14.5
Typ
14
9
15.5
3.0
25
30
Max
Units
dBm
dB
dB
dB
%
mA
mS
V
V
V
µA
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Email:
sales@filss.com
Revised:
07/18/01
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
