FP1510SOT89 参数 Datasheet PDF下载

Preliminary Data Sheet

•

FEATURES

♦

28 dBm Output Power at 1-dB Compression at 1.8 GHz

♦

19 dB Power Gain at 1.8 GHz

♦

1.0 dB Noise Figure

♦

45 dBm Output IP3 at 1.8 GHz

♦

50% Power-Added Efficiency

FP1510SOT89

L

OW

N

OISE

, H

IGH

L

INEARITY

P

ACKAGED

PHEMT

•

DESCRIPTION AND APPLICATIONS

The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a

0.10

µm

x 1500

µm

Schottky barrier gate, defined by electron-beam photolithography. The recessed

“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial

structure and processing have been optimized for reliable high-power applications. The FP1510 also

features Si3N4 passivation and is available in die form or in other packages.

Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN

systems, and other types of wireless infrastructure systems.

•

ELECTRICAL SPECIFICATIONS @ T

Ambient

= 25°C

Parameter

Saturated Drain-Source Current

LP1510SOT89-1

LP1510SOT89-2

LP1510SOT89-3

Power at 1-dB Compression

Power Gain at 1-dB Compression

Power-Added Efficiency

Noise Figure

Output Third-Order Intercept Point

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown

Voltage Magnitude

Gate-Drain Breakdown

Voltage Magnitude

frequency=1.8 GHz

P-1dB

G-1dB

PAE

NF

IP3

I

MAX

G

M

I

GSO

V

P

|V

BDGS

|

|V

BDGD

|

V

DS

= 5 V; I

DS

= 50% I

DSS

V

DS

= 5 V; I

DS

= 50% I

DSS

V

DS

= 5 V; I

DS

= 50% I

DSS

;

P

IN

= 15 dBm

V

DS

= 5 V; I

DS

= 50% I

DSS

V

DS

= 5V; I

DS

= 50% I

DSS

;

P

IN

= -1 dBm

V

DS

= 2 V; V

GS

= 1 V

V

DS

= 2 V; V

GS

= 0 V

V

GS

= -5 V

V

DS

= 2 V; I

DS

= 8 mA

I

GS

= 8 mA

I

GD

= 8 mA

-0.25

10

10

300

Symbol

I

DSS

Test Conditions

V

DS

= 2 V; V

GS

= 0 V

375

451

527

26.5

17

420

490

560

28

19

50

1.0

45

925

400

10

-1.2

12

13

100

-2.0

450

526

600

mA

mA

mA

dBm

dB

%

dB

dBm

mA

mS

µA

V

V

V

Min

Typ

Max

Units

Phone:

(408) 988-1845

Fax:

(408) 970-9950

http://

www.filss.com

Revised:

2/26/02

Email:

sales@filss.com