PRELIMINARY DATA SHEET
FP4050
2-W
ATT
P
OWER
PHEMT
•
FEATURES
♦
48 dBm IP3 at 2 GHz
♦
34 dBm P-1dB at 2 GHz
♦
14 dB Power Gain at 2 GHz
DRAIN
BOND PAD
SOURCE
BOND PAD
(2X)
•
DESCRIPTION AND APPLICATIONS
GATE
BOND PAD
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including
SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and
medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and
ISM band spread spectrum applications.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 2 2 ± °C
3
Parameter
Output Power @
1 dB Compression
Power Gain @
1 dB Compression
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Thermal Resistivity
Symbol
P
1dB
G
1dB
I
DSS
I
MAX
G
M
V
P
|V
BDGD
|
|V
BDGS
|
|I
GSL
|
Q
JC
Test Conditions
f = 2 GHz; V
DS
= 8V; I
DS
= 50% I
DSS
f = 2 GHz; V
DS
= 8V; I
DS
= 50% I
DSS
V
DS
= 2V; V
GS
= 0V
V
DS
= 2V; V
GS
= 1V
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 10 mA
I
GS
= 20 mA
I
GS
= 20 mA
V
GS
= -5 V
15
12
12
950
Min
Typ
34
14
1100
2200
880
-1.2
15
15
0.2
1300
Max
Units
dBm
dB
mA
mA
mS
V
V
V
mA
°C/W
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filtronicsolidstate.com
Revised:
10/04/00
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
