G
ENERAL
P
URPOSE P
HEMT
•
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Gain Compression
Simultaneous Combination of Limits
3
1
3
FPD200
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
2
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +8V
For V
DS
> 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
2 or more Max. Limits
Min
Max
8
-3
I
DSS
10
100
175
Units
V
V
mA
mA
mW
ºC
ºC
W
dB
%
-40
150
0.5
5
80
T
Ambient
= 22°C unless otherwise noted
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
•
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
•
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
•
Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
P
TOT
= 500mW – (3.6mW/°C) x T
HS
where T
HS
= heatsink or ambient temperature.
Example: For a 85°C heatsink temperature: P
TOT
= 0.5W – (0.0036 x (85 – 22)) = 0.27W
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm)
gold wire. Stage temperature should be 250-260°C.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
All information and specifications are subject to change without notice.
•
•
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
11/17/04
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
