FPD2250SOT89
Datasheet v3.0
T
YPICAL
T
UNED
RF P
ERFORMANCE
:
Power Transfer Characteristric
VDS = 5V IDS = 50% IDSS at
f
= 1.85 GHz
30.0
3.75
3.25
55.0%
Pout (dBm)
Comp Point
Drain Efficiency and PAE
VDS = 5V IDS = 50% IDSS at
f
= 1.85 GHz
65.0%
65.0%
29.0
55.0%
PAE
Eff.
Dain Efficiency (%)
45.0%
2.75
Gain Compression (dB)
2.25
45.0%
PAE (%)
Output Power (dBm)
28.0
27.0
1.75
1.25
0.75
35.0%
35.0%
26.0
25.0%
25.0%
25.0
0.25
24.0
15.0%
15.0%
-0.25
-0.75
9
11
13
15
Input Power (dBm)
17
19
5.0%
9
11
13
15
Input Power (dBm)
17
19
5.0%
23.0
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at V
DS
= 5V, I
DS
= 50% of I
DSS
, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
Typical Intermodulation Performance
VDS =5V IDS = 50% IDSS at
f
= 1.85 GHz
20.0
19.0
18.0
3rd Order IM Products (dBc)
-48
Output Power (dBm)
17.0
16.0
15.0
14.0
Pout (dBm)
13.0
-56
12.0
11.0
10.0
-2.5
-1.5
-0.5
0.6
1.6
Input Power (dBm)
2.6
3.6
4.6
-58
-60
3rds (dBc)
-50
-52
-54
-44
-46
30
25
20
FPD2250SOT89 5V / 50%IDSS
MSG
S21
Gain
15
10
5
0
1
2
3
4
5
Frequency (GHz)
6
7
8
Note:
pHEMT devices have enhanced
intermodulation performance. This yields OIP3
values of about P
1dB
+ 14dBm. This IMD
enhancement is affected by the quiescent bias
and the matching applied to the device.
T
YPICAL
I-V C
HARACTERISTICS
:
DC IV Curves FPD1500SOT89
0.60
0.50
0.40
0.30
0.20
VG=-1.5V
VG-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.5V
VG=-0.25V
VG=0V
0.10
Note: The recommended method for measuring
I
DSS
, or any particular I
DS
, is to set the Drain-Source
voltage (V
DS
) at 1.3V. This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above). Setting the V
DS
> 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
Drain-Source Current (A)
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
