L
OW
N
OISE
, H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
•
PERFORMANCE (1850 MHz)
♦
29 dBm Output Power (P
1dB
)
♦
16.5 dB Small-Signal Gain (SSG)
♦
1.0 dB Noise Figure
♦
42 dBm Output IP3
♦
50% Power-Added Efficiency
♦
Evaluation Boards Available
♦
Featuring Lead Free Finish Package
FPD2250DFN
•
DESCRIPTION AND APPLICATIONS
The FPD2250DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
μm
x 1500
μm
Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD2250DFN is available in die form and in
other packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Power at 1dB Gain Compression
Small-Signal Gain
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
Symbol
P
1dB
SSG
PAE
NF
IP3
Test Conditions
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
OUT
= P
1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 25% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
Matched for optimal power
Matched for best IP3
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
≅
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 2.25 mA
I
GS
= 2.25 mA
I
GD
= 2.25 mA
0.7
12
12
560
42
43
700
1.1
600
1
1.0
16
16
10
1.3
825
mA
A
mS
μA
V
V
V
dBm
Min
28
15
Typ
29
16.5
50
1.0
0.8
1.75
Max
Units
dBm
dB
%
dB
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis.com
Revised: 11/14/05
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
