L
OW
N
OISE
, H
IGH
L
INEARITY
P
ACKAGED
PHEMT
FPD2250SOT89
Typical Intermodulation Performance
VDS =5V IDS = 50% IDSS at
f
= 1.85 GHz
20.0
19.0
18.0
Output Power (dBm)
17.0
16.0
15.0
14.0
13.0
-56
12.0
11.0
10.0
-2.5
-1.5
-0.5
0.6
1.6
Input Power (dBm)
2.6
3.6
4.6
-58
-60
-50
-52
-54
3rd Order IM Products (dBc)
-48
-44
-46
Pout (dBm)
3rds (dBc)
Note: pHEMT devices exhibit non-classical intermodulation performance, with equivalent IP3 values
exceeding 14 dB above P
1dB
. This IMD enhancement is affected by the quiescent bias current, the
Drain-Source voltage, and the tuning or matching applied to the device.
Maximum Stable Gain & S
21
30
25
20
FPD2250SOT89 5V / 50%IDSS
MSG
S21
Gain
15
10
5
0
1
2
3
4
5
Frequency (GHz)
6
7
8
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
01/05/05
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
