FPD3000SOT89
L
OW
N
OISE
H
IGH
L
INEARITY
P
ACKAGED P
HEMT
F
EATURES
(1850MH
Z
):
•
•
•
•
•
•
30 dBm Output Power (P1dB)
13 dB Small-Signal Gain (SSG)
1.3 dB Noise Figure
45 dBm Output IP3
45% Power-Added Efficiency
FPD3000SOT89E: RoHS compliant
(Directive 2002/95/EC)
Datasheet v3.0
P
ACKAGE
:
RoHS
G
ENERAL
D
ESCRIPTION
:
The FPD3000SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 3000 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The double recessed
Gate structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
T
YPICAL
A
PPLICATIONS
:
•
•
•
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Power at 1dB Gain Compression
Small-Signal Gain
Power-Added Efficiency
S
YMBOL
P1dB
SSG
PAE
C
ONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
M
IN
29
11.5
T
YP
30
13
45
M
AX
U
NITS
dBm
dB
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
1.3
0.9
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
42
45
750
930
1.5
800
2
0.7
12
12
1.0
16
16
35
20
1.3
1100
mA
mA
mS
µA
V
V
V
°C/W
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
RθJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
≅
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 3 mA
IGS = 3 mA
IGD = 3 mA
Note: T
AMBIENT
= 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
