2W P
OWER P
HEMT
•
FEATURES
♦
32.5 dBm Linear Output Power at 12 GHz
♦
6.5 dB Power Gain at 12 GHz
♦
8 dB Maximum Stable Gain at 12 GHz
♦
42 dBm Output IP3
♦
30% Power-Added Efficiency
DRAIN
BOND
PAD (4X)
SOURCE
BOND
PAD (2x)
FPD3000
GATE
BOND
PAD (4X)
•
DESCRIPTION AND APPLICATIONS
DIE SIZE (µm): 830 x 470
DIE THICKNESS: 75
µm
BONDING PADS (µm): >75 x 60
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),
featuring a 0.25
µm
by 3000
µm
Schottky barrier gate, defined by high-resolution stepper-based
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable high-power
applications. The FPD3000 also features Si
3
N
4
passivation and is available in a P100 flanged
ceramic package and in the low cost plastic SOT89 plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Power at 1dB Gain Compression
Maximum Stable Gain (S
21
/S
12
)
Power Gain at P
1dB
Power-Added Efficiency
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
θ
JC
Symbol
P
1dB
SSG
G
1dB
PAE
IP3
Test Conditions
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
;
P
OUT
= P
1dB
V
DS
= 8V; I
DS
= 50% I
DSS
Matched for optimal power
Tuned for best IP3
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
≅
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 3 mA
I
GS
= 3 mA
I
GD
= 3 mA
V
DS
> 6V
12.0
14.5
750
42
44
930
1.5
800
10
1.0
14.0
16.0
20
1100
mA
A
mS
µA
V
V
V
°C/W
dBm
Min
31.5
7.0
6.0
Typ
32.5
8.0
6.5
30
Max
Units
dBm
dB
dB
%
RF SPECIFICATIONS MEASURED AT
f
= 12 GHz USING CW SIGNAL
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
11/17/04
Email:
sales@filcsi.com
FILTRONIC [ FILTRONIC COMPOUND SEMICONDUCTORS ]
